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Ultra Low Resistance SiC Mosfet High Efficiencys For Renewable Energy Systems

Guangdong Lingxun Microelectronics Co., Ltd
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Ultra Low Resistance SiC Mosfet High Efficiencys For Renewable Energy Systems

Brand Name : Lingxun

Place of Origin : China

Certification : IATF16949,ISO9001,ISO14001,ROHS,REACH

MOQ : According to your order requirement

Price : According to your order requirement

Packaging Details : Confirm package based on part number

Delivery Time : comfirm

Payment Terms : T/T payment

Supply Ability : 600KK/year

Resistance : Low On Resistance

Applications : Power Inverters, Electric Vehicles, Grid Infrastructure, Industrial Drives, Consumer Electronics, Telecommunications Equipment, Battery Chargers

Material : Silicon Carbide

Frequency : High Frequency

Manufacturer : Lingxun

Efficiency : High Efficiency

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Ultra Low Resistance SiC Mosfet High Efficiencys For Renewable Energy Systems

Product Description:

The Silicon Carbide MOSFET is ideal for a range of applications, including power inverters, electric vehicles, grid infrastructure, industrial drives, consumer electronics, telecommunications equipment, and battery chargers. Its high efficiency and frequency capabilities make it the perfect choice for demanding applications where speed and reliability are essential.

The MOSFET's advanced Silicon Carbide technology offers exceptional durability and reliability, making it ideal for use in motor driver applications. Its high efficiency also makes it perfect for use in consumer electronics, where energy efficiency and long battery life are key considerations.

At Lingxun, we are committed to providing our customers with the highest quality products and the Silicon Carbide MOSFET is no exception. Our team of expert engineers have designed this product to meet the needs of the most demanding applications, ensuring that it is both reliable and efficient.

Features:

  • Product Name: Silicon Carbide MOSFET
  • Resistance: Low On Resistance
  • Manufacturer: Lingxun
  • Frequency: High Frequency
  • Efficiency: High Efficiency
  • Material: Silicon Carbide
  • Grid Infrastructure: Suitable for high voltage grid infrastructure applications
  • High Breakdown Voltage: Capable of handling high breakdown voltage
  • Consumer Electronics: Ideal for consumer electronics products

Technical Parameters:

Technical Parameter Description
Resistance Low On Resistance
Material Silicon Carbide
Frequency High Frequency
Manufacturer Lingxun
Applications Power Inverters, Electric Vehicles, Grid Infrastructure, Industrial Drives, Consumer Electronics, Telecommunications Equipment, Battery Chargers
Efficiency High Efficiency
Breakdown Voltage High Breakdown Voltage
Additional Applications Solar Inverters

Applications:

The Lingxun Silicon Carbide MOSFET is a high-frequency switching device that has a low on-resistance, making it ideal for applications that require high efficiency. The product is made with high-quality materials and has undergone stringent quality control measures, resulting in certifications such as ISO9001, ISO14001, ROHS, and REACH.

With a supply ability of 600KK/year, the Lingxun Silicon Carbide MOSFET is a reliable choice for power inverters, electric vehicles, grid infrastructure, industrial drives, consumer electronics, telecommunications equipment, and battery chargers. Its fast switching speed makes it suitable for applications that require quick response times, such as medical devices.

The Lingxun Silicon Carbide MOSFET is available in varying part numbers, with minimum order quantities and prices dependent on the specific product. The product is packaged according to the part number, and delivery times are confirmed upon order. Payment terms are T/T payment.

Ultra Low Resistance SiC Mosfet High Efficiencys For Renewable Energy Systems

Q1.Who are we?

A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing of power semiconductor devices.currently has more than 180 has more than 180 employees and more than 10000 square meters area.We provide over 600 KK high-quality power semiconductor device per annum.

Q2.What is your product line?

A:Existing main production lines include Schottky,low VF Schottky,Fast Recovery Diodes, High Voltage Mosfet, Medium and Low Voltage Mosfet, Super Junction Mosfet, IGBT, SiC shottkly Barrier Diode and Sic Mosfet etc.

Q3.What is your product’s application?

A:Widely used in various fields such as power adapters,LED lighting, brushless motors, lithium battery management, inverters,energy storage and charging pile, etc.

Q4.What is your competitive advantage?

A:1.Strong capabilities factory.We have our own assembly and test factory,fixed investment exceeding 70 million yuan.Having the top automated Wire Bond equipment,provide over 600KK semiconductor power device annually.

2. Service advantages,A stable supply system,Sustainable and stable supply of products.Our own laboratory can quickly and effectively cooperate with validation.

3. Quality assurance,The most mainstream MES system digital factory in the field of packing and testing, certified by ISO9001 2015 version and IATF16949.

4. Product Upgrading,Continuously research and develop new specifications and packaging shapes to meet the application needs of more customers.

Q5.What is your terms of packing?

A:Usually,different packages have different packing.TO-252/263 is reel+sealed bag+inner box+carton.TO-220/247 is tube+inner box+carton.

Q6.What is your MOQ?

A:We provide samples for each item.MOQ depends on your order quantity.

Q7.What is your guarantee quality?

A: Offer samples for testing. Ensure that the bulk product is consistent with the sample. If there is any change, the sample will be provided again for testing. 100% test and check all product before delivery.

Q8.Do you accept customization?

A:Yes,send me your requirement!

Q9.How to contact you?

A:Send your inquire details in the below,Click”Send”,NOW!!!

Any other more questions, please feel free to contact us. We are always at your service !


Product Tags:

Ultra Low Resistance SiC Mosfet

      

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Energy Systems Sic MOS

      
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